R plane sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.

In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of the polished sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.
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