In addition, in the SOS microelectronic circuit design and production, all kinds of semiconductor devices usually need to make on the structural integrity silicon thin film, and because thermal expansion coefficient of silicon is similar to sapphire, a silicon monocrystalline film (100) can be grown on the surface orientation(1-102) of the sapphire substrate by heteroepitaxy.

At present, sapphire crystal has become a widely used substrate for the growth of semiconductor materials.

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